PHP 75.00 RJP30H1 RJP30H1DPD TO-252 SILICON N CHANNEL IGBT HIGH SPEED POWER

RJP30H1 RJP30H1DPD TO-252 Silicon N Channel IGBT High Speed Power Switching

Features:
Trench gate and thin wafer technology (G6H-II series)
High speed switching: tr = 80 ns typ., tf = 150 ns typ.
Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ.
Low leak current: ICES = 1 uA max.

Datasheet:
http://pdf1.alldatasheet.com/datasheet-pdf/view/451354/RENESAS/RJP30H1DPD.html

Package Includes:
1 x RJP30H1 RJP30H1DPD TO-252 Silicon N Channel IGBT High Speed Power Switching



SERIOUS BUYERS ONLY PLEASE

Contact number: 09333-888-611

Do payment first before your item would be shipped on that schedule date. No COD option.

Mode of payment is either thru GCASH, BPI, LBC or PALAWAN Express, PAYPAL(+4.5%+15), Cash for meetups.

Provincial buyers, you pay for the added shipping cost:
Via LBC: 175.00 (Visayas) or 180.00 (Metro Manila) or 185.00 (Luzon/Mindanao) + 5php insurance for every 500 declared value.

Via JRS: 99.00 (Visayas) or 114.00 (Luzon/Mindanao)

Schedule for sending parcels is M-W-F ONLY. Payments should be received in the morning of MWF if you want your item to be shipped on that scheduled day. As I leave by lunch to send out of town orders already. Otherwise, it would be on the next schedule date. Thanks!





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